P. Ramvall : rechercher sur Z-Library

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1

Effects of interchannel coupling in a two-dimensional electron gas at high magnetic fields

Ramvall, P., Du, Qinghong, Xu, Hongqi, Samuelson, L., Omling, P.

Journal:

Physical Review B

Année:

1996

Langue:

english

Fichier:

PDF, 67 KB

english, 1996

2

Growth mechanisms of GaN quantum dots and their optical properties

Satoru Tanaka, Peter Ramvall, Shintaro Nomura, Hideki Hirayama, Yoshinobu Aoyagi

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Année:

1998

Langue:

english

Fichier:

PDF, 2.27 MB

english, 1998

3

GaN Quantum Structures with Fractional Dimension — From Quantum Well to Quantum Dot

S. Tanaka, I. Suemune, P. Ramvall, Y. Aoyagi

Journal:

physica status solidi (b)

Année:

1999

Langue:

english

Fichier:

PDF, 186 KB

english, 1999

4

Large negative magnetoresistance introduced by line dislocations in a modulation doped Ga0.25In0.75As/InP quantum well

P. Ramvall, N. Carlsson, P. Omling, L. Samuelson, W. Seifert

Journal:

Superlattices and Microstructures

Année:

1997

Langue:

english

Fichier:

PDF, 205 KB

english, 1997

5

Anomalous peaks in the Shubnikov-de Haas spectra of a top gated AlGaAsGaAs heterostructure

P. Ramvall, Qinghong Du, Hongqi Xu, P. Omling

Journal:

Materials Science and Engineering: B

Année:

1995

Langue:

english

Fichier:

PDF, 346 KB

english, 1995

6

Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy

X.Q Shen, P Ramvall, P Riblet, Y Aoyagi, K Hosi, S Tanaka, I Suemune

Journal:

Journal of Crystal Growth

Année:

2000

Langue:

english

Fichier:

PDF, 140 KB

english, 2000

7

Size-dependent optical nonlinearities in GaN quantum dots

Philippe Riblet, Satoru Tanaka, Peter Ramvall, Shintaro Nomura, Yoshinobu Aoyagi

Journal:

Solid State Communications

Année:

1999

Langue:

english

Fichier:

PDF, 100 KB

english, 1999

8

In situetching for total control over axial and radial nanowire growth

Magnus T. Borgström, Jesper Wallentin, Johanna Trägårdh, Peter Ramvall, Martin Ek, L. Reine Wallenberg, Lars Samuelson, Knut Deppert

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 527 KB

english, 2010

9

MOVPE growth of InPGaInAs and GaAsGaInP heterostructures for electronic transport applications

N. Carlsson, S. Anand, S.-B. Carlsson, B. Gustafson, P. Omling, P. Ramvall, L. Samuelson, W. Seifert, Q. Wang

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 318 KB

english, 1997

10

Doping-dependent optical gain in GaN

Ramvall, Peter, Aoyagi, Yoshinobu, Kuramata, Akito, Hacke, Peter, Domen, Kay, Horino, Kazuhiko

Journal:

Applied Physics Letters

Année:

2000

Langue:

english

Fichier:

PDF, 361 KB

english, 2000

11

Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

Hirayama, Hideki, Tanaka, Satoru, Ramvall, Peter, Aoyagi, Yoshinobu

Journal:

Applied Physics Letters

Année:

1998

Langue:

english

Fichier:

PDF, 422 KB

english, 1998

12

Effect of indium doping on the transient optical properties of GaN films

Kumano, Hidekazu, Hoshi, Ken-ichi, Tanaka, Satoru, Suemune, Ikuo, Shen, Xu-Qiang, Riblet, Philippe, Ramvall, Peter, Aoyagi, Yoshinobu

Journal:

Applied Physics Letters

Année:

1999

Langue:

english

Fichier:

PDF, 368 KB

english, 1999

13

Observation of confinement-dependent exciton binding energy of GaN quantum dots

Ramvall, Peter, Tanaka, Satoru, Nomura, Shintaro, Riblet, Philippe, Aoyagi, Yoshinobu

Journal:

Applied Physics Letters

Année:

1998

Langue:

english

Fichier:

PDF, 312 KB

english, 1998

14

Precursor evaluation for in situ InP nanowire doping

Borgström, M T, Norberg, E, Wickert, P, Nilsson, H A, Trägårdh, J, Dick, K A, Statkute, G, Ramvall, P, Deppert, K, Samuelson, L

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 814 KB

english, 2008

15

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

Wang, C. H., Wang, S. W., Doornbos, G., Astromskas, G., Bhuwalka, K., Contreras-Guerrero, R., Edirisooriya, M., Rojas-Ramirez, J. S., Vellianitis, G., Oxland, R., Holland, M. C., Hsieh, C. H., Ramvall

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 1.69 MB

english, 2013

16

MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures

Ramvall, P., Wang, C.H., Astromskas, G., Vellianitis, G., Holland, M., Droopad, R., Samuelson, L., Wernersson, L.E., Passlack, M., Diaz, C.H.

Journal:

Journal of Crystal Growth

Année:

2013

Langue:

english

Fichier:

PDF, 1.14 MB

english, 2013

17

A UV Light-Emitting Diode Incorporating GaN Quantum Dots

Tanaka, Satoru, Lee, Jeong-Sik, Ramvall, Peter, Okagawa, Hiroaki

Journal:

Japanese Journal of Applied Physics

Année:

2003

Langue:

english

Fichier:

PDF, 357 KB

english, 2003

18

Ga0.25In0.75As/InP quantum wells with extremely high and anisotropic two-dimensional electron gas mobilities

P. Ramvall, N. Carlsson, P. Omling, L. Samuelson, W. Seifert, M. Stolze, Q. Wang

Année:

1996

Langue:

english

Fichier:

PDF, 342 KB

english, 1996

19

Tuning of the single-particle relaxation time of a high mobility electron gas in a Ga[sub 0.25]In[sub 0.75]As/InP quantum well

Ramvall, P., Carlsson, N., Omling, P., Samuelson, L., Seifert, W., Wang, Q.

Journal:

Applied Physics Letters

Année:

1997

Langue:

english

Fichier:

PDF, 330 KB

english, 1997

20

Quantized conductance in a heterostructurally defined Ga[sub 0.25]In[sub 0.75]As/InP quantum wire

Ramvall, P., Carlsson, N., Maximov, I., Omling, P., Samuelson, L., Seifert, W., Wang, Q., Lourdudoss, S.

Journal:

Applied Physics Letters

Année:

1997

Langue:

english

Fichier:

PDF, 317 KB

english, 1997

21

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

Wang, C. H., Doornbos, G., Astromskas, G., Vellianitis, G., Oxland, R., Holland, M. C., Huang, M. L., Lin, C. H., Hsieh, C. H., Chang, Y. S., Lee, T. L., Chen, Y. Y., Ramvall, P., Lind, E., Hsu, W. C.

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 1.49 MB

english, 2014

22

Application of microwave detection of the Shubnikov–de Haas effect in two-dimensional systems

Linke, H., Omling, P., Ramvall, P., Meyer, B. K., Drechsler, M., Wetzel, C., Rudeloff, R., Scholz, F.

Journal:

Journal of Applied Physics

Année:

1993

Langue:

english

Fichier:

PDF, 1.45 MB

english, 1993

23

As/GaAs heterojunctions

Ramvall, P., Kowalski, B., Omling, P.

Journal:

Physical Review B

Année:

1997

Langue:

english

Fichier:

PDF, 139 KB

english, 1997

24

Confinement induced decrease of the exciton-longitudinal optical phonon coupling in GaN quantum dots

Ramvall, Peter, Tanaka, Satoru, Nomura, Shintaro, Riblet, Philippe, Aoyagi, Yoshinobu

Journal:

Applied Physics Letters

Année:

1999

Langue:

english

Fichier:

PDF, 309 KB

english, 1999

25

Two different regimes of electron transport in a two-dimensional electron gas at high magnetic fields

Du, Qinghong, Xu, Hongqi, Ramvall, P., Omling, P.

Journal:

Physical Review B

Année:

1997

Langue:

english

Fichier:

PDF, 75 KB

english, 1997

26

Optical characterization of the “E2” deep level in GaN

P. Hacke, P. Ramvall, S. Tanaka, Y. Aoyagi, A. Kuramata, K. Horino, H. Munekata

Année:

1999

Langue:

english

Fichier:

PDF, 335 KB

english, 1999

27

Quantum transport in high mobility modulation doped Ga[sub 0.25]In[sub 0.75]As/InP quantum wells

Ramvall, P., Carlsson, N., Omling, P., Samuelson, L., Seifert, W., Wang, Q., Ishibashi, K., Aoyagi, Y.

Journal:

Journal of Applied Physics

Année:

1998

Langue:

english

Fichier:

PDF, 473 KB

english, 1998

28

Influence of a piezoelectric field on the electron distribution in a double GaN/Al[sub 0.14]Ga[sub 0.86]N heterojunction

Ramvall, Peter, Aoyagi, Yoshinobu, Kuramata, Akito, Hacke, Peter, Horino, Kazuhiko

Journal:

Applied Physics Letters

Année:

1999

Langue:

english

Fichier:

PDF, 261 KB

english, 1999

29

Carrier-modulated, microwave-detected Shubnikov–de Haas oscillations in two-dimensional systems

Linke, H., Kowalski, B., Ramvall, P., Emanuelsson, P., Omling, P., Oettinger, K., Drechsler, M., Meyer, B. K.

Journal:

Applied Physics Letters

Année:

1993

Langue:

english

Fichier:

PDF, 570 KB

english, 1993

30

[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - Transport and Schottky properties of GaInP capped GaInAs/InP quantum wells with extremely high electron mobilities

Ramvall, P., Anand, S., Carlsson, N., Carlsson, S.-B., Omling, P., Samuelson, L., Seifert, W., Tidlund, P., Wang, Q., Wernersson, L.-E.

Année:

1996

Langue:

english

Fichier:

PDF, 411 KB

english, 1996

31

[IEEE Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA (11-15 May 1997)] Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials - Fabrication and characterization of a regrown InP/GaInAs quantum point contact

Maximov, I., Carlsson, N., Omling, P., Ramvall, P., Samuelson, L., Seifert, W., Wang, Q., Lourdudoss, S., Rodrigues Messmer, E., Forchel, A., Kerkel, K.

Année:

1997

Langue:

english

Fichier:

PDF, 510 KB

english, 1997

32

Improvements of the Optical and Electrical Properties of GaN Films by Using In-doping Method During Growth

Shen, Xu-Qiang, Ramvall, Peter, Riblet, Philippe, Aoyagi, Yoshinobu

Journal:

Japanese Journal of Applied Physics

Année:

1999

Langue:

english

Fichier:

PDF, 55 KB

english, 1999

33

GaN quantum dot UV light emitting diode

Lee, Jeong-Sik, Tanaka, Satoru, Ramvall, Peter, Okagawa, Hiroaki

Journal:

MRS Proceedings

Année:

2003

Langue:

english

Fichier:

PDF, 700 KB

english, 2003

34

Conductance oscillations in overgrown sub 100 nm InP/ quantum wires

Maximov, I, Carlsson, N, Omling, P, Ramvall, P, Samuelson, L, Seifert, W, Wang, Q, Lourdudoss, S, Messmer, E Rodriguez, Forchel, A, Kerkel, K

Journal:

Semiconductor Science and Technology

Année:

1998

Langue:

english

Fichier:

PDF, 201 KB

english, 1998

35

Coulomb blockade and resonant tunnelling in etched and regrown Ga 0.25 In 0.75 As/InP quantum dots

Shorubalko, I, Ramvall, P, Xu, H Q, Maximov, I, Seifert, W, Omling, P, Samuelson, L

Journal:

Semiconductor Science and Technology

Année:

2001

Langue:

english

Fichier:

PDF, 261 KB

english, 2001

36

InAs FinFETs with Hfin = 20nm fabricated using a top-down etch process

Oxland, Richard, Li, Xu, Chang, Shang-Wen, Wang, S.-W., Vasen, Tim, Ramvall, Peter, Contreras-Guerrero, Rocio, Rojas-Ramirez, Juan, Holland, Martin, Doornbos, Gerben, Chang, Y.S., Macintyre, Douglas,

Journal:

IEEE Electron Device Letters

Année:

2016

Langue:

english

Fichier:

PDF, 466 KB

english, 2016

37

Contact-Free Determination of Scattering Times in Heterojunction Device Structures

Omling, P., Linke, H., Ramvall, P., Meyer, B. K.

Journal:

MRS Proceedings

Année:

1992

Langue:

english

Fichier:

PDF, 388 KB

english, 1992

38

Ingan Quantum Dots Fabricated On Aigan Surfaces -Growth Mechanism And Optical Propertiesh-

Hirayama, H., Tanaka, S., Ramvall, P., Aoyagi, Y.

Journal:

MRS Proceedings

Année:

1997

Langue:

english

Fichier:

PDF, 1.42 MB

english, 1997

39

[IEEE 2016 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2016.6.14-2016.6.16)] 2016 IEEE Symposium on VLSI Technology - InAs nanowire GAA n-MOSFETs with 12–15 nm diameter

Vasen, T., Ramvall, P., Afzalian, A., Thelander, C., Dick, K.A., Holland, M., Doornbos, G., Wang, S.W., Oxland, R., Vellianitis, G., van Dal, M.J.H., Duriez, B., Ramirez, J.-R., Droopad, R., Wernersso

Année:

2016

Langue:

english

Fichier:

PDF, 547 KB

english, 2016

40

Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration

Holland, Martin, van Dal, Mark, Duriez, Blandine, Oxland, Richard, Vellianitis, Georgios, Doornbos, Gerben, Afzalian, Aryan, Chen, Ta-Kun, Hsieh, Chih-Hua, Ramvall, Peter, Vasen, Tim, Yeo, Yee-Chia, P

Journal:

Scientific Reports

Année:

2017

Langue:

english

Fichier:

PDF, 1.33 MB

english, 2017

41

Physics and performances of III-V nanowire broken-gap heterojunction TFETs using an efficient tight-binding mode-space NEGF model enabling million-atom nanowire simulations

Afzalian, Aryan, Vasen, Tim, Ramvall, Peter, Shen, Tzer-Min, Wu, Jeff, Passlack, Matthias

Journal:

Journal of Physics Condensed Matter

Année:

2018

Langue:

english

Fichier:

PDF, 2.02 MB

english, 2018

42

GaN Quantum Dot UV-LED-Fabrication and Optical Characteristics

TANAKA, Satoru, LEE, Jeong-Sik, RAMVALL, Peter, OKAGAWA, Hiroaki

Journal:

The Review of Laser Engineering

Année:

2004

Fichier:

PDF, 325 KB

2004

43

Sn Incorporation in Ultra-Thin InAs Nanowires for Next-Generation Transistors Characterized by Atom Probe Tomography

Giddings, Alexander Devin, Ramvall, Peter, Vasen, Tim, Afzalian, Aryan, Hwang, Ruey-Lian, Yeo, Dr. Yee-Chia, Passlack, Matthias

Journal:

ACS Applied Nano Materials

Année:

2019

Langue:

english

Fichier:

PDF, 1.30 MB

english, 2019